20V Dual N-Channel Enhancement Mode MOSFET

Description The NP8205 uses advanced trench technology to provide excellent RDS(ON)  V , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

General Features DS R =20V,ID =6.5A DS(ON)=14.6mΩ (typical) @ VGS=4.5V RDS(ON)  High power and current handing capability =18.4mΩ (typical) @ VGS=2.5V  Lead free product is acquired  Surface mount package

Application  Battery protection  Load switch  Power management Package  SOT23-6L