N-Channel Enhancement Mode MOSFET

Description The NP3400 uses advanced trench technology to provide excellent RDS(ON)  V , low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.

General Features DS =30V，ID R =5.8A DS(ON)(Typ.)=22mΩ @VGS=4.5V R DS(ON)(Typ.)=28mΩ @VGS  High power and current handing capability =2.5V  Lead free product is acquired  Surface mount package

Application  PWM applications  Load switch Package  SOT-23-3L