N-Channel Enhancement Mode MOSFET

Description The NP2300MR uses advanced trench technology to provide excellent RDS(ON) General Features , low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications

 VDS =20V，ID R =5A DS(ON)(Typ.)=24mΩ @ VGS R =4.5V DS(ON)(Typ.)=30mΩ @VGS  High power and current handing capability =2.5V  Lead free product is acquired  Surface mount package

Application  PWM applications  Load switch Package  SOT-23-3L